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| (R) BD136 BD138/BD140 PNP SILICON TRANSISTORS Type BD136 BD136-10 BD136-16 BD138 BD140 BD140-10 BD140-16 s Marking BD136 BD136-10 BD136-16 BD138 BD140 BD140-10 BD140-16 3 2 1 s STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR SOT-32 DESCRIPTION The BD136, BD138 and BD140 are silicon Epitaxial Planar PNP transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The complementary NPN types are the BD135 BD137 and BD139. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 o C Total Dissipation at T amb 25 o C Storage Temperature Max. Operating Junction Temperature BD136 -45 -45 Value BD138 -60 -60 -5 -1.5 -3 -0.5 12.5 1.25 -65 to 150 150 Unit BD140 -80 -80 V V V A A A W W o C o C November 2001 1/4 BD136 / BD138 / BD140 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 10 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -30 V V CB = -30 V V EB = -5 V I C = -30 mA for BD136 for BD138 for BD140 I C = -0.5 A I C = -0.5 A I C = -5 mA I C = -150 mA I C = -0.5 A I B = -0.05 A V CE = -2 V V CE = -2 V V CE = -2 V V CE = -2 V 25 40 25 63 100 T C = 125 o C Min. Typ. Max. -0.1 -10 -10 Unit A A A V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain -45 -60 -80 -0.5 -1 250 V V V V V h FE h FE Groups I C = -150 mA V CE = -2 V for BD136/BD140 group-10 for BD136/BD140 group-16 160 250 * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Areas 2/4 BD136 / BD138 / BD140 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10 o DIM. 7.4 10.5 0.7 0.40 2.4 1.0 15.4 inch MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 3.2 2.54 0.084 0.05 0.011 10o 0.118 0.126 0.100 TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 TYP. 2.2 4.4 3.8 3 1: Base 2: Collector 3: Emitter 0016114/B 3/4 BD136 / BD138 / BD140 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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